Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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Drain Current Current regulator Same type as D. Such statements are not binding statements about the suitability of products for a particular application.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any dataaheet all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
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IRF710, SiHF710 product information
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. B, Mar This datasheet is subject to change without notice.
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Vishay – MOSFETs – IRF, SiHF – Power MOSFET
Datsheet license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Repetitive rating; pulse width limited by maximum junction temperature see fig.
Please note that some Vishay documentation may still make reference to the IEC definition. B, Mar 7 8 9 10 Fig.
Case Temperature td off tf tr Fig. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.